Scanning tunneling microscopy studies of diamond films and optoelectronic materials

summary report, December 1, 1992-November 30, 1996
  • 3.57 MB
  • English

National Aeronautics and Space Administration, National Technical Information Service, distributor , [Washington, DC, Springfield, Va
Scanning tunneling microscopy., Diamond films., Crystal growth., Atomic structure., Vapor deposi
StatementJose M. Perez.
Series[NASA contractor report] -- NASA CR-203419.
ContributionsUnited States. National Aeronautics and Space Administration.
The Physical Object
Pagination1 v.
ID Numbers
Open LibraryOL18111706M

"Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials". We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM).

Get this from a library. Scanning tunneling microscopy studies of diamond films and optoelectronic materials: summary report, December 1, Novem [Jose M Perez; United States. National Aeronautics and Space Administration.]. Get this from a library. Scanning tunneling microscopy studies of diamond films and optoelectronic materials: progress report, 12/1//1/ [Jose M Perez; United States.

National Aeronautics and Space Administration.]. D.A. Bonnell, in Encyclopedia of Materials: Science and Technology, Scanning tunneling microscopy (STM) is a technique that uses tunneling electrons to produce three-dimensional real-space images of the surfaces of materials.

The technique is as simple in concept as stylus profilometry, yet it provides capabilities not available with any other measurement method.

We report on scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond grown by using the microwave plasma-assisted chemical vapor deposition method.

STM/STS measurements were performed by 3 He-refrigerator based STM under ultra-high vacuum. The STM topography on the film Cited by: A scanning tunneling microscope (STM) is an instrument for imaging surfaces at the atomic development in earned its inventors, Gerd Binnig and Heinrich Rohrer (at IBM Zürich), the Nobel Prize in Physics in For an STM, good resolution is considered to be nm lateral resolution and nm (10 pm) depth resolution.

With this resolution, individual. This book presents a unified view of the rapidly growing field of scanning tunneling microscopy and its many derivatives. After examining novel scanning-probe techniques and the instrumentation and methods, the book provides detailed accounts of STM applications.

It examines limitations of the present-day investigations and provides insight Cited by: abstract = "We report on scanning tunneling microscopy/spectroscopy (STM/STS) experiments on ()-oriented epitaxial films of heavily boron-doped diamond grown by microwave plasma-assisted chemical vapor by: 2.

Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment.

The first U. Army Natick Research, Development and Engineering Center Atomic Force/Scanning Tunneling Microscopy (AFM/STM) Symposium was held on lunein Natick, Massachusetts.

This book represents the compilation of. Scanning tunneling microscopy, a novel technique based on vacuum tunneling, yields surface topographies in real space and work function profiles on an atomic sale.

Surfaces are shown for Au(llO), Si(ll1) and GaAs(ll1). Introduction Tunneling spectroscopy has developed into a field of intensive researchCited by: Scanning Tunneling Microscope.

The scanning tunneling microscope (not to be confused with scanning electron microscopes), or STM, is the most powerful type of microscope ever built. It was invented in by Gerd Binnig and Heinrich Rohrer of IBM's Zurich Lab in Zurich, Switzerland.

Description Scanning tunneling microscopy studies of diamond films and optoelectronic materials PDF

The invention garnered the two a Nobel prize for physics in Scanning Tunneling Microscopy 3 ()exp() 2 () ()exp 2 V E z m E z I Vbias s EF ∝ bias s F − ⋅ ∝ − ρ φ φ ρ, (1) where m is the mass of electron and ħ is the Planck’s constant. An electronic state describes a specific configuration, an electron can possess.

The introduction of scanning tunneling microscopy (STM) followed by scanning tunneling spectroscopy (STS) opened experimental access to the geometric and electronic structure of materials on an.

Scanning Tunneling Microscopy Researchers. Anjan Soumyanarayanan, Michael Yee, Yang He. over a range of 2K to 40K. Using scanning tunneling spectroscopy, we have been able to map the local density of states spatially with temperature and energy.

The critical factor in both of these studies is the ability to compare spectra at exactly. Description In the two-dimensional (2D) lattice of graphene, consisting of carbon atoms arranged in a honeycomb lattice, the charge carriers are described by a Dirac-Weyl Hamiltonian.

Seeking to understand their unique nature, this thesis presents results of scanning tunneling microscopy (STM) and spectroscopy (STS) experiments at low temperatures and in magnetic fi eld. Chen: Introduction to Scanning Tunneling Microscopy iii Instrumentation, new trends and ideas have been added.

The basic organization of the second edition is essentially identical to the first edition. All the materials in the first edition proven to be useful are preserved. Some of the less important materials are eliminated or convertedFile Size: 2MB.

Scanning tunneling microscope (STM), type of microscope whose principle of operation is based on the quantum mechanical phenomenon known as tunneling, in which the wavelike properties of electrons permit them to “tunnel” beyond the surface of a solid into regions of space that are forbidden to them under the rules of classical probability of finding such tunneling.

Scanning tunnelling microscopy (STM) offers the potential to probe this prediction, as it can resolve simultaneously both atomic structure and the electronic density of by: The contrast in scanning probe microscopy images of ultrathin CaF2 films epitaxially grown on Si() is studied using scanning tunneling microscopy (STM).

/ Energy gap and surface structure of superconducting diamond films probed by scanning tunneling microscopy. In: Physica C: Superconductivity and its applications.

Download Scanning tunneling microscopy studies of diamond films and optoelectronic materials EPUB

; Vol. I, No. SPEC. ISS. Cited by: 5. Functional and Spectroscopic Measurements with Scanning Tunneling Microscopy Amanda M. Moore and Paul S. Weiss Annual Review of Analytical Chemistry Atomic-Resolution Surface Spectroscopy with the Scanning Tunneling Microscope R. HamersCited by: 8. Scanning Tunneling Microscopy Study on Strongly Correlated Materials The Harvard community has made this article openly available.

Please share how this access benefits you. Your story matters Citation He, Yang. Scanning Tunneling Microscopy Study on Strongly Correlated Materials. Doctoral dissertation, Harvard University. Scanning Tunneling Microscopy/Spectroscopy on Superconducting Diamond Films Terukazu Nishizaki*, Yoshihiko Takano 1, Masanori Nagao1, Tomohiro Takenouchi 2, Hiroshi Kawarada2 and Norio Kobayashi Institute for Materials Research, Tohoku University, SendaiJapan 1National Institute for Materials Science, Sengen, Tsukuba resolution scanning tunneling microscopy (STM) imaging and nanolithography.

We show that FDSS offers significant improvements in lithographic patterning, and is applicable to a range of materials, including the hard metallic-ceramic hafnium diboride (HfB 2).

Finally, we explore the use of HfB 2-coated W wires for STM imaging and spectroscopy. Abstract. Scanning tunneling microscopy of C 70 films deposited on HOPG and gold substrates has been carried out to investigate the 2D packing, defects and disorder.

Besides providing direct evidence for orientational disorder, high resolution images showing the carbon skeleton as well as the molecular arrangement in a solid solution of C 70 and C 60 are by: 6. Scanning Tunneling Optical Resonance Microscopy Developed The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased.

Scanning Tunneling Optical. Application of scanning tunneling microscopy to study lubricant distribution of magnetic thin film rigid disk surfaces T.

Details Scanning tunneling microscopy studies of diamond films and optoelectronic materials FB2

Sriram *, K. Wahl, Yip-Wah Chung, B. Bhushan, W. Rothschild * Corresponding author for this workCited by: 5. 1 Scanning Tunneling Microscopy of Gate T unable Topological Insulator Bi 2Se 3 Thin Films.

Tong Zhang1,2, Niv Levy1, Jeonghoon Ha1,2,3, Young Kuk3, and Joseph A. Stroscio 1*. 1Center for Nanoscale Science and Technology, NIST, Gaithersburg, MDUSA 2Maryland NanoCenter, University of Maryland, College Park, MDUSA.

Department of. Scanning tunneling microscopy (STM) was invented by Binnig and Rohrer in [, ]. By integrating scanning capacity into vacuum tunneling capability, STM enables us to image the surfaces of conducting samples and study their local electronic properties down to.

The theoretically predicted topological Kondo insulators as strongly correlated systems with strong spin-orbital coupling make an ideal playground to test our theory of quantum materials.

Scanning tunneling microscopy (STM) is a powerful technique to explore new phenomena in materials with exotic electronic states due to its high spacial Author: Yang He.To this end we have performed spectroscopic studies of NbSe 2 around the CDW transition temperature (33K) from T=2K to 40K.

Using scanning tunneling spectroscopy, we have mapped the local density of states vs. temperature and energy. Above the CDW transition temperature the CDW loses long-range coherence and is pinned to impurities.

On the other hand, several earlier scanning tunneling microscopy (STM) studies of graphitized surfaces, such as Ir(1 1 1), Pt(1 1 1) (10, 11), and SiC, also have been performed. In these experiments, the structure observed by STM was strongly influenced by the interaction between the graphitic layer and the underlying substrate, and features Cited by: